Method for stabilizing an interface post etch to minimize queue time issues before next processing step

This invention describes a way to remove a protective layer from a silicon wafer using a special etching process. It involves treating the layer, then using a remotely generated plasma from a specific gas mixture (ammonium and nitrogen trifluoride) to etch it away at a low temperature. After etching, the layer is plasma annealed and a new protective layer is added to stabilize the surface.

Why it matters: The increasing complexity and miniaturization of semiconductor devices since 2013 have made precise interface control and minimized queue time degradation more critical for yield.

Status: ExpiredProtection ended and was never renewed
How hard to build: SpecializedPlasma etching chamber, gas delivery system

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