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Patent drawing for Formation of pores in atomically thin layers
US 11,524,898 B2
Coatings US 11,524,898 B2 Not in force

Formation of pores in atomically thin layers

This invention describes a specific way to create tiny holes in extremely thin materials, like graphene. The process involves first forming small, distinct bumps, or "islands," on a base surface. Then, the atomically thin material is grown on the base surface, but it grows *around* these islands, effectively leaving behind pores where the islands were.

Why it matters: Filed before significant advancements in nanoscale patterning and controlled CVD growth for 2D materials. These improvements could make the precise templated pore formation method described in the claims more feasible and scalable today.

Status
Not in forceListed as no longer active. The specific reason is not in the record we hold.
How hard to build
SpecializedCVD reactor, vacuum, atomically thin layer growth

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